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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION *With TO-3 package *Complement to type 2SD552 APPLICATIONS *Power amplifier applications *Power switching applications *DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -220 -180 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB552 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-10A; IB=-1A IC=-10A; IB=-1A VCB=-220V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-10V -180 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 25 80 Output capacitance 300 pF Transition frequency 3.5 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB552 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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